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FZ750R65KE3C1NOSA1

FZ750R65KE3C1NOSA1

FZ750R65KE3C1NOSA1

Infineon Technologies

FZ750R65KE3C1NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FZ750R65KE3C1NOSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -50°C~125°C TJ
Part Status Active
Configuration Single Switch
Power - Max 3000000W
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 6500V
Current - Collector (Ic) (Max) 750A
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 750A
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 205nF @ 25V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $99999.99999 $99999.99999
500 $98999.9999901 $49499999.99505
1000 $97999.9999902 $97999999.9902
1500 $96999.9999903 $145499999.98545
2000 $95999.9999904 $191999999.9808
2500 $94999.9999905 $237499999.97625
FZ750R65KE3C1NOSA1 Product Details

FZ750R65KE3C1NOSA1 Description


The FZ750R65KE3C1NOSA1 is a highly insulated module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode. The usage of an IGBT power module, which serves as a switch, allows for exceptionally quick and highly energy-efficient power on and off operations. The IGBT power module is quickly replacing other devices in high-power applications because of its improved switching, temperature, weight, and cost performance.



FZ750R65KE3C1NOSA1 Features


Electrical Features

  • Low VCEsat

Mechanical Features

  • Package with CTI>600

  • Package with enhanced insulation of 10.4kV AC 10s

  • High creepage and clearance distances

  • AlSiC base plate for increased thermal cycling capability

  • Extended storage temperature down to Tstg = -55°C



FZ750R65KE3C1NOSA1 Applications


  • Medium voltage converters

  • Traction drives

  • Switch electrical power


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