FZ750R65KE3C1NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ750R65KE3C1NOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-50°C~125°C TJ
Part Status
Active
Configuration
Single Switch
Power - Max
3000000W
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
6500V
Current - Collector (Ic) (Max)
750A
Vce(on) (Max) @ Vge, Ic
3.4V @ 15V, 750A
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
205nF @ 25V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$99999.99999
$99999.99999
500
$98999.9999901
$49499999.99505
1000
$97999.9999902
$97999999.9902
1500
$96999.9999903
$145499999.98545
2000
$95999.9999904
$191999999.9808
2500
$94999.9999905
$237499999.97625
FZ750R65KE3C1NOSA1 Product Details
FZ750R65KE3C1NOSA1 Description
The FZ750R65KE3C1NOSA1 is a highly insulated module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode. The usage of an IGBT power module, which serves as a switch, allows for exceptionally quick and highly energy-efficient power on and off operations. The IGBT power module is quickly replacing other devices in high-power applications because of its improved switching, temperature, weight, and cost performance.
FZ750R65KE3C1NOSA1 Features
Electrical Features
Low VCEsat
Mechanical Features
Package with CTI>600
Package with enhanced insulation of 10.4kV AC 10s
High creepage and clearance distances
AlSiC base plate for increased thermal cycling capability