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IAUC100N10S5N040ATMA1

  • IAUC100N10S5N040ATMA1
  • IAUC100N10S5N040ATMA1

IAUC100N10S5N040ATMA1

IAUC100N10S5N040ATMA1

Infineon Technologies

IAUC100N10S5N040ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IAUC100N10S5N040ATMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™-5
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 167W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 50V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
IAUC100N10S5N040ATMA1 Product Details

IAUC100N10S5N040ATMA1 Description


IAUC100N10S5N040ATMA1 belongs to the family of OptiMOS?5 power MOSFETs manufactured by Infineon Technologies for high-frequency switching and synchronous rectification. It provides superior thermal resistance, advanced switching performance, and low gate charge. Based on its specific features, it is able to be used in a wide range of applications.



IAUC100N10S5N040ATMA1 Features


  • Low gate charge

  • N-channel, normal level

  • Advanced switching performance

  • Available in the PG-TDSON-8 package

  • Low on-resistance RDS(on)



IAUC100N10S5N040ATMA1 Applications


  • High-frequency switching application

  • Synchronous rectification

  • Uninterruptible power supplies


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