IAUC90N10S5N062ATMA1

join

new-10%

Manufacturer part number:IAUC90N10S5N062ATMA1

Manufacturer:Infineon Technologies

Description:IAUC90N10S5N062ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IAUC90N10S5N062ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Operating Temperature	-55°C~175°C TJ
Series	OptiMOS™-5
Part Status	Active
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	115W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.2m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	3.8V @ 59μA
Input Capacitance (Ciss) (Max) @ Vds	3275pF @ 50V
Current - Continuous Drain (Id) @ 25°C	90A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V

Quantity	Unit Price	Ext. Price
1	$2.37000	$2.37
500	$2.3463	$1173.15
1000	$2.3226	$2322.6
1500	$2.2989	$3448.35
2000	$2.2752	$4550.4
2500	$2.2515	$5628.75

IAUC90N10S5N062ATMA1 Description

IAUC90N10S5N062ATMA1 developed by Infineon Technologies is a type of MOSFET which is a field-effect transistor that uses the effect of electric field to control the semiconductor (S) through the gate of the metal layer (M) through the oxide layer (O). Its characteristic is to use the gate voltage to control the drain current. Its input terminal is connected to a high level or a low level (usually a high level), and a voltage drop Vce will be generated when the current Ib flows through the MOSFET. The size of this voltage drop is determined by the forward conduction angle of the P-type and N-type diodes. size to decide.