IFF600B12ME4S8PB11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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IFF600B12ME4S8PB11BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~150°C
Series
EconoDUAL™ 3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Configuration
Half Bridge
Power - Max
20mW
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
600A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 600A
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$411.907752
$411.907752
10
$398.363397
$3983.63397
25
$395.594237
$9889.855925
50
$392.844327
$19642.21635
100
$384.764277
$38476.4277
500
$357.255596
$178627.798
IFF600B12ME4S8PB11BOSA1 Product Details
IFF600B12ME4S8PB11BOSA1 Description
IFF600B12ME4S8PB11BOSA1 IGBT module is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. IGBT modules have the characteristics of energy saving, convenient installation and maintenance, and stable heat dissipation. IGBT module is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. As a national strategic emerging industry, it is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment.