APTGT100H170G

new-10%

Manufacturer part number:APTGT100H170G

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 1700V 150A 560W SP6

Case Package:SOT-23

Datasheet:APTGT100H170G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	12
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	560W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	12
Number of Elements	4
Configuration	Full Bridge Inverter
Case Connection	ISOLATED
Power - Max	560W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.7kV
Max Collector Current	150A
Current - Collector Cutoff (Max)	350μA
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Input Capacitance	9nF
Turn On Time	450 ns
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 100A
Turn Off Time-Nom (toff)	1100 ns
IGBT Type	Trench Field Stop
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	9nF @ 25V
VCEsat-Max	2.4 V
RoHS Status	RoHS Compliant