IFS100B12N3E4_B39

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IFS100B12N3E4_B39

Manufacturer part number:IFS100B12N3E4_B39

Manufacturer:Infineon Technologies

Description:IFS100B12N3E4_B39 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IFS100B12N3E4_B39 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Chassis Mount
Package / Case	Module
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Published	2009
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	34
ECCN Code	EAR99
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	34
JESD-30 Code	R-XUFM-X34
Qualification Status	Not Qualified
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	515W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Current - Collector Cutoff (Max)	1mA
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	100A
Power Dissipation-Max (Abs)	515W
Turn On Time	210 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 100A
Turn Off Time-Nom (toff)	610 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	6.3nF @ 25V
VCEsat-Max	2.1 V
RoHS Status	RoHS Compliant