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IGT40R070D1E8220ATMA1

  • IGT40R070D1E8220ATMA1
  • IGT40R070D1E8220ATMA1

IGT40R070D1E8220ATMA1

IGT40R070D1E8220ATMA1

Infineon Technologies

GAN HV

SOT-23

IGT40R070D1E8220ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Operating Temperature 0°C~150°C TJ
Series CoolGaN™
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 125W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 1.6V @ 2.6mA
Input Capacitance (Ciss) (Max) @ Vds 382pF @ 320V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Drain to Source Voltage (Vdss) 400V
Vgs (Max) ±10V

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