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IHW30N65R5XKSA1

IHW30N65R5XKSA1

IHW30N65R5XKSA1

Infineon Technologies

IHW30N65R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHW30N65R5XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2013
Series TrenchStop™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 176W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 176W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 60A
Reverse Recovery Time 95 ns
Collector Emitter Breakdown Voltage 650V
Turn On Time 44 ns
Test Condition 400V, 30A, 13 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
Turn Off Time-Nom (toff) 258 ns
IGBT Type Trench
Gate Charge 153nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 29ns/220ns
Switching Energy 850μJ (on), 240μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.443760 $13.44376
10 $12.682792 $126.82792
100 $11.964899 $1196.4899
500 $11.287640 $5643.82
1000 $10.648717 $10648.717
IHW30N65R5XKSA1 Product Details

IHW30N65R5XKSA1 Description


IHW30N65R5XKSA1, provided by Infineon Technologies, is a type of reverse conducting IGBT with a monolithic body diode with low forward voltage designed for soft commutation only. Based on TRENCHSTOP? technology, it is able to deliver high ruggedness, temperature stable behavior, very low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. Therefore, IHW30N65R5XKSA1 IGBT is well suited for a wide range of applications, including resonant converters, inverterized microwave ovens, and more.



IHW30N65R5XKSA1 Features


High ruggedness

Stable temperature behavior

Very low VCEsat

Easy parallel switching capability

Low EMI



IHW30N65R5XKSA1 Applications


Induction cooking

Inverterized microwave ovens

Resonant converters


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