NGTB40N65IHL2WG Description

This Insulated Gate Bipolar Transistor (IGBT) NGTB40N65IHL2WG features a robust and cost-effective Field Stop (FS) Trench construction and provides superior performance in demanding switching applications, offering both low-on-state voltage and minimal switching loss. The IGBT NGTB40N65IHL2WG is well-suited for half-bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free-wheeling diode with a low forward voltage.

NGTB40N65IHL2WG Features

Extremely Efficient Trench with Field Stop Technology

Low Switching Loss Reduces System Power Dissipation

Optimized for Low Losses in IH Cooker Application

TJmax= 175°C

Soft, Fast Free Wheeling Diode

This is a Pb- -Free Device

NGTB40N65IHL2WG Applications

Inductive Heating

Soft Switching

Automotive 

Body electronics & lighting 

Communications equipment