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IKB20N65EH5ATMA1

  • IKB20N65EH5ATMA1
  • IKB20N65EH5ATMA1

IKB20N65EH5ATMA1

IKB20N65EH5ATMA1

Infineon Technologies

IKB20N65EH5ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKB20N65EH5ATMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchStop™ 5
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 125W
Reverse Recovery Time 80ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 38A
Test Condition 400V, 20A, 32 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
IGBT Type Trench Field Stop
Gate Charge 48nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 19ns/160ns
Switching Energy 560μJ (on), 130μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.103291 $4.103291
10 $3.871029 $38.71029
100 $3.651915 $365.1915
500 $3.445202 $1722.601
1000 $3.250191 $3250.191
IKB20N65EH5ATMA1 Product Details

KB20N65EH5ATMA1 Description


The IKB20N65EH5ATMA1 is a TRENCHSTOPTM 5 high-speed switching IGBT co-packed with a full rated current RAPID1 anti-parallel diode.



IKB20N65EH5ATMA1 Features


  • Highspeed H5technologyoffering

  • Best-in-Class efficiency in hard switching and resonant topologies

  • 650Vbreakdownvoltage

  • LowQG.

  • IGBTcopacked with full rated current RAPID 1 fast antiparallel diode

  • Maximum junction temperature175°C

  • Pb-free leadplating;RoHS-compliant



IKB20N65EH5ATMA1 Applications


  • Energy generation

  • Industrial power supplies

  • Metal treatment

  • Energy Distribution


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