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HGTG5N120BND

HGTG5N120BND

HGTG5N120BND

ON Semiconductor

HGTG5N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

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HGTG5N120BND Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Max Power Dissipation 167W
Current Rating 21A
Number of Elements 1
Element Configuration Single
Power Dissipation 167W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 21A
Reverse Recovery Time 65 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.45V
Max Breakdown Voltage 600V
Turn On Time 35 ns
Test Condition 960V, 5A, 25 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 5A
Continuous Collector Current 21A
Turn Off Time-Nom (toff) 357 ns
IGBT Type NPT
Gate Charge 53nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 22ns/160ns
Switching Energy 450μJ (on), 390μJ (off)
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.93000 $2.93
10 $2.64000 $26.4
450 $2.07273 $932.7285
900 $1.86929 $1682.361
1,350 $1.59089 $1.59089
HGTG5N120BND Product Details

HGTG5N120BND IGBT Description


The HGTG5N120BND IGBT has low conduction loss and low saturation voltage with high-reliable construction. Thanks to its NPT (Non-Punch Through) design, it is rugged and is ideal for hard switching and inverter applications. Overall, its short-circuit rating is wanted for many demanding purposes.



HGTG5N120BND IGBT Features


  • 10A, 1200V, TC = 110°C

  • Low Saturation Voltage : VCE(sat) = 2.45 V @ I C = 5A

  • Low Conduction Loss

  • Typical Fall Time: 175ns at TJ = 150°C

  • Short Circuit Rating



HGTG5N120BND IGBT Applications


  • UPS system

  • Solar cells

  • General Motor Driver

  • Oil Pump

  • PTC Heater

  • Motor control

  • High voltage power supplies


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