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IKD06N60RFATMA1

IKD06N60RFATMA1

IKD06N60RFATMA1

Infineon Technologies

IKD06N60RFATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKD06N60RFATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 100W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *KD06N60
Element Configuration Single
Input Type Standard
Power - Max 100W
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 12A
Reverse Recovery Time 48 ns
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Test Condition 400V, 6A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 6A
IGBT Type Trench Field Stop
Gate Charge 48nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 7ns/106ns
Switching Energy 90μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.506086 $0.506086
10 $0.477440 $4.7744
100 $0.450415 $45.0415
500 $0.424920 $212.46
1000 $0.400868 $400.868
IKD06N60RFATMA1 Product Details

IKD06N60RFATMA1 Description


IKD06N60RFATMA1 is a 600v IGBT with integrated diode in packages offering space-saving advantages. The Infineon IKD06N60RFATMA1 can be applied in Piezo injection, HID lighting, and Low power motor drives applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IKD06N60RFATMA1 is in the PG-TO252-3 package with 100W power dissipation. 



IKD06N60RFATMA1 Features


Optimized Eon, Eoff, and Qrr for low switching losses

Operating range of 4 to 30kHz

Smooth switching performance leading to low EMI levels

Very tight parameter distribution

Maximum junction temperature 175°C

Short circuit capability of 5μs

Best in class current versus package size performance

Qualified according to AECQ101 

Pb-free lead plating; RoHS comp



IKD06N60RFATMA1 Applications


Piezo injection

HID lighting

Low-power motor drives

Communications equipment 

Wireless infrastructure 

Industrial 

Factory automation & control 

Enterprise systems 

Enterprise projectors


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