STGWA40H120DF2 Description

The STGWA40H120DF2 device is IGBT developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGWA40H120DF2 Features

• Maximum junction temperature: T_J = 175 °C

• High speed switching series

• Minimized tail current

• V_CE(sat) = 2.1 V (typ.) @ I_C = 40 A

• 5 μs minimum short circuit withstand time at T_J=150 °C

• Safe paralleling

• Very fast recovery antiparallel diode

• Low thermal resistance

STGWA40H120DF2 Applications

• Uninterruptible power supply

• Welding machines

• Photovoltaic inverters

• Power factor correction

• High frequency converters