IKFW50N60ETXKSA1                Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

IKFW50N60ETXKSA1                      Features

TRENCHSTOP technology offers:·Very low VCE(sat)

·Short circuit withstand time 5us atT=175°℃

·Positive temperature coefficient in VCE(sat)·Low EMI

.Very soft.fast recovery anti-parallel diode

·Maximum junction temperature175°C

·2500 Vrms electrical isoation50/60Hzt=1min

·100% tested isolated mounting surface*Pb-free lead plating: RoHS compliant

·Complete product spectrum and PSpice Models

 IKFW50N60ETXKSA1                  Applications

·General Purpose Drives(GPD)

·Servo Drives

·Industrial UPS

·Welding

·Solar String Inverter