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IKW50N60H3FKSA1

IKW50N60H3FKSA1

IKW50N60H3FKSA1

Infineon Technologies

IKW50N60H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

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IKW50N60H3FKSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 333W
Pin Count 3
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 333W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Reverse Recovery Time 130 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 54 ns
Test Condition 400V, 50A, 7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 50A
Turn Off Time-Nom (toff) 297 ns
IGBT Type Trench Field Stop
Gate Charge 315nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 23ns/235ns
Switching Energy 2.36mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.54000 $6.54
30 $5.61667 $168.5001
120 $4.92358 $590.8296
510 $4.25357 $2169.3207
1,020 $3.65283 $3.65283
IKW50N60H3FKSA1 Product Details

IKW50N60H3FKSA1 Description


The IKW50N60H3FKSA1 is a High-Speed IGBT in Trench and field-stop technology with a soft, fast recovery anti-parallel diode. The high-speed IKW50N60H3FKSA is used to reduce the size of the active components (25 to 70kHz). The Infineon IKW50N60H3FKSA1 provides the best compromise between switching and conduction losses. The key feature of this IGBT is a MOSFET-like turn-OFF switching behavior, leading to low turn-OFF losses.



IKW50N60H3FKSA1 Features


  • Low switching losses for high efficiency

  • Fast switching behaviour with low EMI emissions

  • Optimized diode for target applications, meaning further improvement in switching losses

  • Low gate resistor selection is possible (down to 5R) whilst maintaining excellent switching behaviour

  • Short-circuit capability

  • Excellent performance

  • Low switching and conduction losses

  • Very good EMI behavior


IKW50N60H3FKSA1 Applications


  • uninterruptible power supplies

  • welding converters

  • converters with the high switching frequency

  • Alternative Energy

  • Power Management


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