AIKW40N65DF5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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AIKW40N65DF5XKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2012
Series
Automotive, AEC-Q101, Trenchstop™ 5
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
250W
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
74A
Test Condition
400V, 20A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
IGBT Type
Trench
Gate Charge
95nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
19ns/165ns
Switching Energy
350μJ (on), 100μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.64000
$7.64
10
$6.95500
$69.55
240
$5.85063
$1404.1512
720
$5.16443
$3718.3896
1,200
$4.56771
$4.56771
AIKW40N65DF5XKSA1 Product Details
AIKW40N65DF5XKSA1 Description
The AIKW40N65DF5XKSA1 is a High speed fast IGBT in TRENCHSTOP? 5 technology copacked with RAPID 1 fast and soft antiparallel diode. A nonlinear device called the anti-parallel diode pair is used to produce harmonic components for Q-band input signals (33–50 GHz). In order to eliminate the bias circuits and reduce the number of circuit components for low-cost hybrid production, the diode is zero-biased.
AIKW40N65DF5XKSA1 Features
IGBT copacked with RAPID 1 fast and soft antiparallel diode
Maximum junction temperature 175°C
Dynamically stress tested
Qualified according to AEC-Q101
Green package (RoHS compliant)
Best-in-Class efficiency in hard switching and resonant topologies