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IMW120R060M1HXKSA1

  • IMW120R060M1HXKSA1
  • IMW120R060M1HXKSA1

IMW120R060M1HXKSA1

IMW120R060M1HXKSA1

Infineon Technologies

SiCFET (Silicon Carbide) N-Channel 78m Ω @ 13A, 18V +23V, -7V 1.06nF @ 800V 31nC @ 18V 1.2kV TO-247-3

SOT-23

IMW120R060M1HXKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Series CoolSiC™
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 150W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 78m Ω @ 13A, 18V
Vgs(th) (Max) @ Id 5.7V @ 5.6mA
Input Capacitance (Ciss) (Max) @ Vds 1.06nF @ 800V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 18V
Drain to Source Voltage (Vdss) 1.2kV
Drive Voltage (Max Rds On,Min Rds On) 15V 18V
Vgs (Max) +23V, -7V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $16.75000 $16.75
500 $16.5825 $8291.25
1000 $16.415 $16415
1500 $16.2475 $24371.25
2000 $16.08 $32160
2500 $15.9125 $39781.25
IMW120R060M1HXKSA1 Product Details

IMW120R060M1HXKSA1 Description

 

IMW120R060M1HXKSA1 N-Channel MOSFET is a type of Power MOSFET that is build on a  semiconductor process optimized to combine performance with reliability. IMW120R060M1HXKSA1 MOSFET is ideal for low frequency applications requiring performance and ruggedness. Infineon Technologies IMW120R060M1HXKSA1 is general use and is suitable for Fast EV charging, Motor control and drives, Solutions for solar energy systems, and Uninterruptible Power Supply.

 

 

IMW120R060M1HXKSA1 Features

 

Reduced system complexity

Reduced cooling effort

Highest efficiency

Increased power density

Higher frequency operation

 

 

IMW120R060M1HXKSA1 Applications

 

Fast EV charging

Motor control and drives

Solutions for solar energy systems

Uninterruptible Power Supply


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