SPD02N50C3

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SPD02N50C3

Manufacturer part number:SPD02N50C3

Manufacturer:Infineon Technologies

Description:SPD02N50C3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SPD02N50C3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	560V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	1.8A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	25W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	25W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 80μA
Halogen Free	Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.8A Tc
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	1.8A
Threshold Voltage	3V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	500V
Drain-source On Resistance-Max	3Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	5.4A
Avalanche Energy Rating (Eas)	50 mJ
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Contains Lead