IPA50R500CE datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IPA50R500CE Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2008
Series
CoolMOS™
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
28W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
500m Ω @ 2.3A, 13V
Vgs(th) (Max) @ Id
3.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds
433pF @ 100V
Current - Continuous Drain (Id) @ 25°C
7.6A Tc
Gate Charge (Qg) (Max) @ Vgs
18.7nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
13V
Vgs (Max)
±20V
JEDEC-95 Code
TO-220AB
Drain-source On Resistance-Max
0.5Ohm
Pulsed Drain Current-Max (IDM)
24A
DS Breakdown Voltage-Min
500V
Avalanche Energy Rating (Eas)
129 mJ
FET Feature
Super Junction
RoHS Status
RoHS Compliant
IPA50R500CE Product Details
IPA50R500CE Description
IPA50R500CE is a type of CoolMOS? power MOSFET developed by Infineon Technologies using CoolMOS? CE technology. Compared with previous CoolMOS? generations, it is able to provide improved light-load efficiency. It is a cost-attractive alternative compared to standard MOSFETs. Moreover, it provides outstanding reliability with proven CoolMOS? quality combined with high body diode ruggedness.
IPA50R500CE Features
CoolMOS? CE technology
Improved light load efficiency
Outstanding reliability with proven CoolMOS? quality