FQPF4N80

new-10%

Manufacturer part number:FQPF4N80

Manufacturer:ON Semiconductor

Description:FQPF4N80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQPF4N80 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Current Rating	2.2A
Power Dissipation-Max	43W Tc
Element Configuration	Single
Power Dissipation	43W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.6 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	880pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.2A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	2.2A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	800V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free