IPB022N04LGATMA1

new-10%

Manufacturer part number:IPB022N04LGATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:IPB022N04LGATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	167W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	167W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.2m Ω @ 90A, 10V
Vgs(th) (Max) @ Id	2V @ 95μA
Input Capacitance (Ciss) (Max) @ Vds	13000pF @ 20V
Current - Continuous Drain (Id) @ 25°C	90A Tc
Gate Charge (Qg) (Max) @ Vgs	166nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	90A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0029Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	40V
RoHS Status	RoHS Compliant