STFV3N150

new-10%

Manufacturer part number:STFV3N150

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 1500V 2.5A TO-220FH

Case Package:SOT-23

Datasheet:STFV3N150 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STFV3
Pin Count	3
Number of Elements	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	30W
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9 Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	939pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.5A Tc
Gate Charge (Qg) (Max) @ Vgs	29.3nC @ 10V
Rise Time	47ns
Drain to Source Voltage (Vdss)	1500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	61 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	2.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	9Ohm
Drain to Source Breakdown Voltage	1.5kV
Pulsed Drain Current-Max (IDM)	10A
Avalanche Energy Rating (Eas)	450 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant