IPB027N10N3GATMA1 Description

IPB027N10N3GATMA1 is a single N-Channelpower MOSFET. IPB027N10N3GATMA1 has a maximum power dissipation of 300000 mW. During shipment, the IPB027N10N3GATMA1component will be enclosed in tape and reel packing to ensure safe delivery and allow for quick mounting after delivery.
The operating temperature of this IPB027N10N3GATMA1 MOSFET transistor ranges from -55 to 175 degrees Celsius. The N channel MOSFET transistor IPB027N10N3GATMA1 operates in enhancement mode. The IPB027N10N3GATMA1 is constructed using optimos technology.


IPB027N10N3GATMA1 Features

Environmentally friendly
Smallest board-space consumption
Easy-to-design products
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Increased efficiency
Highest power density
Less paralleling required
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2
Benefits


IPB027N10N3GATMA1 Applications

Isolated DC-DC converters (telecom and datacom systems
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Synchronous rectification for AC-DC SMPS
Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
Uninterruptable power supplies (UPS)