FDN306P

new-10%

Manufacturer part number:FDN306P

Manufacturer:ON Semiconductor

Description:FDN306P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDN306P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Supplier Device Package	SuperSOT-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	PowerTrench®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	40MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	-12V
Technology	MOSFET (Metal Oxide)
Current Rating	-2.6A
Number of Elements	1
Voltage	12V
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Current	26A
Power Dissipation	500mW
Turn On Delay Time	11 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	40mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1138pF @ 6V
Current - Continuous Drain (Id) @ 25°C	2.6A Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Rise Time	10ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	-2.6A
Threshold Voltage	-600mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-12V
Dual Supply Voltage	-12V
Input Capacitance	1.138nF
Drain to Source Resistance	40mOhm
Rds On Max	40 mΩ
Nominal Vgs	-600 mV
Height	940μm
Length	2.92mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free