IPB036N12N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IPB036N12N3GATMA1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins
7
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
OptiMOS™
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G6
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
300W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
Case Connection
DRAIN
Turn On Delay Time
35 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 270μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
13800pF @ 60V
Current - Continuous Drain (Id) @ 25°C
180A Tc
Gate Charge (Qg) (Max) @ Vgs
211nC @ 10V
Rise Time
52ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
21 ns
Turn-Off Delay Time
76 ns
Continuous Drain Current (ID)
180A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
120V
Drain-source On Resistance-Max
0.0036Ohm
Drain to Source Breakdown Voltage
120V
Avalanche Energy Rating (Eas)
900 mJ
Max Junction Temperature (Tj)
175°C
Height
4.5mm
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
IPB036N12N3GATMA1 Product Details
IPB036N12N3GATMA1 Description
On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products. The manufacturer of IPB036N12N3GATMA1 is Siemens Semiconductors.
IPB036N12N3GATMA1 Features
ideal for high-frequency switching and DC/DC converters
Excellent gate charge x Rosony product (FOM)
Very low on-resistance Rosxon)
N-channel, normal level 100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC1' for target applications-Halogen-free according to IEC61249-2-21