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IPW60R060C7XKSA1

IPW60R060C7XKSA1

IPW60R060C7XKSA1

Infineon Technologies

IPW60R060C7XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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IPW60R060C7XKSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ C7
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 162W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 400V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 35A
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.06Ohm
Avalanche Energy Rating (Eas) 159 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $51.299200 $51.2992
10 $48.395472 $483.95472
100 $45.656105 $4565.6105
500 $43.071798 $21535.899
1000 $40.633771 $40633.771
IPW60R060C7XKSA1 Product Details

IPW60R060C7XKSA1   Description


  The Cool MOS Cool MOS C7 IPW60R060C7XKSA1 is a revolutionary high-voltage power MOSFET technology designed by Infineon Technologies based on the principle of SJ. The 600V CoolMOS C7 series combines the experience of leading SJ MOSFET suppliers and best-in-class innovation.

The 600V C7 is the first technology in history with a power of * A less than 1 ohm * mm.

 

IPW60R060C7XKSA1   Features


?Suitable for hard and soft switching( PFCand high performance LLC)

?Increased MOSFET dv/dtruggednessto120V/ns

?Increased efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg

?Best in class RDS(on)/package

?Qualified for industrial grade applications according to JEDEC(J-STD20 and JESD22)

 

 

IPW60R060C7XKSA1   Applications


PFC stages and PWM stages(TTF,LLC)for high power/performance

SM PSe.g.Computing,Server,Telecom,UPS and Solar.

 

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