IPW60R060C7XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IPW60R060C7XKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2008
Series
CoolMOS™ C7
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
162W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
60m Ω @ 15.9A, 10V
Vgs(th) (Max) @ Id
4V @ 800μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
2850pF @ 400V
Current - Continuous Drain (Id) @ 25°C
35A Tc
Gate Charge (Qg) (Max) @ Vgs
68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
35A
Max Dual Supply Voltage
600V
Drain-source On Resistance-Max
0.06Ohm
Avalanche Energy Rating (Eas)
159 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$51.299200
$51.2992
10
$48.395472
$483.95472
100
$45.656105
$4565.6105
500
$43.071798
$21535.899
1000
$40.633771
$40633.771
IPW60R060C7XKSA1 Product Details
IPW60R060C7XKSA1 Description
The CoolMOS CoolMOS C7IPW60R060C7XKSA1 is a revolutionary high-voltage power MOSFET technology designed by Infineon Technologies based on the principle of SJ. The 600V CoolMOS C7 series combines the experience of leading SJ MOSFET suppliers and best-in-class innovation.
The 600V C7 is the first technology in history with a power of * A less than 1 ohm * mm.