Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	214W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	41 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	3.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	8410pF @ 50V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	117nC @ 10V
Rise Time	59ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0042Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	100V
RoHS Status	ROHS3 Compliant

IPB042N10N3GE8187ATMA1

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