Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IPB048N06LGATMA1

IPB048N06LGATMA1

IPB048N06LGATMA1

Infineon Technologies

Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) TO-263

SOT-23

IPB048N06LGATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 7600pF @ 30V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100A
Drain-source On Resistance-Max 0.0044Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 810 mJ
RoHS Status RoHS Compliant

Related Part Number

IXTA2N80P
IXTA2N80P
$0 $/piece
IRFPS35N50LPBF
IRF6215LPBF
CPH6444-TL-E
BSS138-T
BSS138-T
$0 $/piece
ZVN3310ASTOB
R6018ANJTL

Get Subscriber

Enter Your Email Address, Get the Latest News