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SSM3K309T(TE85L,F)

SSM3K309T(TE85L,F)

SSM3K309T(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-Ch Sm Sig FET Id 3.2A 30V 10VGSS

SOT-23

SSM3K309T(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 23 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 31m Ω @ 4A, 4V
Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.7A Ta
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4V
Vgs (Max) ±12V
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 4.7A
Gate to Source Voltage (Vgs) 1V
Drain to Source Breakdown Voltage 20V
RoHS Status RoHS Compliant

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