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IPB065N03LGATMA1

IPB065N03LGATMA1

IPB065N03LGATMA1

Infineon Technologies

Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263

SOT-23

IPB065N03LGATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 52 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 56W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation56W
Case Connection DRAIN
Turn On Delay Time5.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time4.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.4 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage30V
Drain-source On Resistance-Max 0.0095Ohm
Avalanche Energy Rating (Eas) 60 mJ
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:1918 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.955371$0.955371
10$0.901293$9.01293
100$0.850277$85.0277
500$0.802148$401.074
1000$0.756743$756.743

About IPB065N03LGATMA1

The IPB065N03LGATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB065N03LGATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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