NTTFS5811NLTAG

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NTTFS5811NLTAG

Manufacturer part number:NTTFS5811NLTAG

Manufacturer:ON Semiconductor

Description:NTTFS5811NLTAG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTTFS5811NLTAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	6.4MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Power Dissipation-Max	2.7W Ta 33W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	33W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1570pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Ta 53A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	53A
Threshold Voltage	1.7V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	65 mJ
Nominal Vgs	1.7 V
Height	800μm
Length	3.15mm
Width	3.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free