IPB100N08S2L07ATMA1

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Manufacturer part number:IPB100N08S2L07ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:IPB100N08S2L07ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	5400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	246nC @ 10V
Rise Time	56ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	75V
Drain-source On Resistance-Max	0.0087Ohm
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	810 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead