IPL60R210P6AUMA1

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Manufacturer part number:IPL60R210P6AUMA1

Manufacturer:Infineon Technologies

Description:Metal Oxide Semiconductor Field Effect Transistor

Case Package:SOT-23

Datasheet:IPL60R210P6AUMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-PowerTSFN
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™ P6
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	2A (4 Weeks)
Number of Terminations	4
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	151W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	210m Ω @ 7.6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 630μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1750pF @ 100V
Current - Continuous Drain (Id) @ 25°C	19.2A Tc
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	19.2A
Max Dual Supply Voltage	600V
Drain-source On Resistance-Max	0.21Ohm
Pulsed Drain Current-Max (IDM)	52A
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free