IPB180N04S4LH0ATMA1

new-10%

Manufacturer part number:IPB180N04S4LH0ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH TO263-7

Case Package:SOT-23

Datasheet:IPB180N04S4LH0ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	250W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	2.2V @ 180μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	24440pF @ 25V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	310nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	+20V, -16V
Continuous Drain Current (ID)	180A
Max Dual Supply Voltage	40V
Drain-source On Resistance-Max	0.001Ohm
Pulsed Drain Current-Max (IDM)	720A
Avalanche Energy Rating (Eas)	850 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead