IPB35N12S3L26ATMA1

new-10%

Manufacturer part number:IPB35N12S3L26ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CHANNEL_100+

Case Package:SOT-23

Datasheet:IPB35N12S3L26ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2016
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-263AB
Drain Current-Max (Abs) (ID)	35A
Drain-source On Resistance-Max	0.0322Ohm
Pulsed Drain Current-Max (IDM)	140A
DS Breakdown Voltage-Min	120V
Avalanche Energy Rating (Eas)	175 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	ROHS3 Compliant