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IPB45N06S409ATMA2

IPB45N06S409ATMA2

IPB45N06S409ATMA2

Infineon Technologies

MOSFET N-CH 60V 45A TO263-3

SOT-23

IPB45N06S409ATMA2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.946308g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101, OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 71W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.4m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 34μA
Input Capacitance (Ciss) (Max) @ Vds 3785pF @ 25V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 45A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Avalanche Energy Rating (Eas) 97 mJ
Height 4.4mm
Length 10mm
Width 9.25mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.78128 $0.78128

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