NCV8440STT1G

new-10%

Manufacturer part number:NCV8440STT1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 59V 2.6A SOT-223-4

Case Package:SOT-23

Datasheet:NCV8440STT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	CONSULT SALES OFFICE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.69W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	110m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id	1.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	155pF @ 35V
Current - Continuous Drain (Id) @ 25°C	2.6A Ta
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 4.5V
Drain to Source Voltage (Vdss)	59V
Drive Voltage (Max Rds On,Min Rds On)	3.5V 10V
Vgs (Max)	±15V
Continuous Drain Current (ID)	2.6A
Drain-source On Resistance-Max	0.95Ohm
Pulsed Drain Current-Max (IDM)	10A
DS Breakdown Voltage-Min	52V
Avalanche Energy Rating (Eas)	110 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free