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IPB60R045P7ATMA1

  • IPB60R045P7ATMA1
  • IPB60R045P7ATMA1

IPB60R045P7ATMA1

IPB60R045P7ATMA1

Infineon Technologies

HIGH POWER_NEW

SOT-23

IPB60R045P7ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Series CoolMOS™ P7
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 201W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 22.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1.08mA
Input Capacitance (Ciss) (Max) @ Vds 3891pF @ 400V
Current - Continuous Drain (Id) @ 25°C 61A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $9.93000 $9.93
500 $9.8307 $4915.35
1000 $9.7314 $9731.4
1500 $9.6321 $14448.15
2000 $9.5328 $19065.6
2500 $9.4335 $23583.75

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