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IPB60R299CPATMA1

IPB60R299CPATMA1

IPB60R299CPATMA1

Infineon Technologies

Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) TO-263

SOT-23

IPB60R299CPATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series CoolMOS™
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Pin Count 4
Number of Elements 1
Power Dissipation-Max 96W Tc
Power Dissipation 96W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 299m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead

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