FQP1P50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQP1P50 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
63W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
10.5Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.5A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
FQP1P50 Product Details
FQP1P50 Description
FQP1P50 is a type of QFET? P-channel enhancement-mode MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. Based on this technology, it is able to provide low on-state resistance, fast switching speed, and withstand high energy pulse in the avalanche and commutation mode. As a result, FQP2P40 is capable of providing considerable benefits for electronic lamp ballasts based on the complementary half-bridge topology.