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FQP1P50

FQP1P50

FQP1P50

ON Semiconductor

FQP1P50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQP1P50 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 63W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 10.5Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
FQP1P50 Product Details

FQP1P50 Description


FQP1P50 is a type of QFET? P-channel enhancement-mode MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. Based on this technology, it is able to provide low on-state resistance, fast switching speed, and withstand high energy pulse in the avalanche and commutation mode. As a result, FQP2P40 is capable of providing considerable benefits for electronic lamp ballasts based on the complementary half-bridge topology.



FQP1P50 Features


  • DMOS technology

  • Low on-state resistance

  • Fast switching speed

  • High dv/dt capability

  • Available in the TO-220 package



FQP1P50 Applications


  • Electronic lamp ballasts


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