IPB64N25S320ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IPB64N25S320ATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Supplier Device Package
PG-TO263-3-2
Operating Temperature
-55°C~175°C TJ
Packaging
Cut Tape (CT)
Published
2012
Series
OptiMOS™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
300W Tc
Turn On Delay Time
18 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
20mOhm @ 64A, 10V
Vgs(th) (Max) @ Id
4V @ 270μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
7000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
64A Tc
Gate Charge (Qg) (Max) @ Vgs
89nC @ 10V
Rise Time
20ns
Drain to Source Voltage (Vdss)
250V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
64A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
250V
Input Capacitance
7nF
Drain to Source Resistance
17.5mOhm
Rds On Max
20 mΩ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$3.71217
$3.71217
2,000
$3.52656
$7.05312
IPB64N25S320ATMA1 Product Details
IPB64N25S320ATMA1 Description
With Infineon Technologies' IPB64N25S320ATMA1 power MOSFET, you'll be able to switch between different lines in addition to amplifying electronic signals. It can dissipate up to 300000 mW of power. Its channel is in the process of being improved. Optimos-t technology was used to create this device. This MOSFET transistor can operate at temperatures as low as -55°C and as high as 175°C.