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IPB65R065C7ATMA1

IPB65R065C7ATMA1

IPB65R065C7ATMA1

Infineon Technologies

MOSFET N-CH TO263-3

SOT-23

IPB65R065C7ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™ P6
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 171W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 557pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $4.64011 $4.64011

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