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IPB65R110CFDATMA2

IPB65R110CFDATMA2

IPB65R110CFDATMA2

Infineon Technologies

HIGH POWER_LEGACY

SOT-23

IPB65R110CFDATMA2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ CFD2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 277.8W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 110m Ω @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V
Current - Continuous Drain (Id) @ 25°C 31.2A Tc
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $3.30638 $3.30638

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