FDP3205 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDP3205 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2011
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
150W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
7.5mOhm @ 59A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7730pF @ 25V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.896633
$0.896633
10
$0.845880
$8.4588
100
$0.798000
$79.8
500
$0.752830
$376.415
1000
$0.710217
$710.217
FDP3205 Product Details
FDP3205 Description
FDP3205 is a type of N-channel PowerTrench? MOSFET that is manufactured by ON Semiconductor based on the advanced PowerTrench? process for extremely low RDS (on). On the basis of this process, FDP2614 MOSFET is able to provide low on-state resistance and superior switching performance.