IPB65R150CFDATMA1

new-10%

Manufacturer part number:IPB65R150CFDATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(2+Tab) TO-263 T/R

Case Package:SOT-23

Datasheet:IPB65R150CFDATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	195.3W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	195.3W
Case Connection	DRAIN
Turn On Delay Time	12.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 900μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2340pF @ 100V
Current - Continuous Drain (Id) @ 25°C	22.4A Tc
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Rise Time	7.6ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5.6 ns
Turn-Off Delay Time	52.8 ns
Continuous Drain Current (ID)	22.4A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	72A
Max Junction Temperature (Tj)	150°C
Height	4.7mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead