FDMA530PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDMA530PZ Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-VDFN Exposed Pad
Number of Pins
6
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
35MOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Current Rating
-6.8A
[email protected] Reflow Temperature-Max (s)
30
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
2.4W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.4W
Turn On Delay Time
6 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
35m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1070pF @ 15V
Current - Continuous Drain (Id) @ 25°C
6.8A Ta
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V
Rise Time
21ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±25V
Fall Time (Typ)
31 ns
Turn-Off Delay Time
43 ns
Continuous Drain Current (ID)
-6.8A
Threshold Voltage
-2.1V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
-30V
Pulsed Drain Current-Max (IDM)
24A
Dual Supply Voltage
-30V
Nominal Vgs
25 V
Height
750μm
Length
2mm
Width
2mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.30784
$0.92352
6,000
$0.28661
$1.71966
15,000
$0.27599
$4.13985
30,000
$0.27020
$8.106
FDMA530PZ Product Details
FDMA530PZ Description
The ONSEMI FDMA530PZ is a single P-channel MOSFET manufactured using the PowerTrench? technology. It is intended for battery charging or load switching in cellular phones and other ultra-portable applications. It has a MOSFET with low ON-state resistance. The MicroFET 2X2 package has excellent thermal performance for its size and is ideally suited to linear mode applications.
FDMA530PZ Features
Max. RDS(on) = 35m|at VGS = -10V, ID = -6.8A
Max. RDS(on) = 65m|at VGS = -4.5V, ID = -5.0A
Low profile -0.8mm maximum -in the new package MicroFET 2X2 mm
HBM ESD protection level > 3k V typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS compliant
FDMA530PZ Applications
General usage and suitable for many different applications