IPB65R280E6ATMA1

new-10%

Manufacturer part number:IPB65R280E6ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-Ch 700V 13.8A D2PAK-2

Case Package:SOT-23

Datasheet:IPB65R280E6ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.946308g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™ E6
Pbfree Code	no
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	104W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	280m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 440μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 100V
Current - Continuous Drain (Id) @ 25°C	13.8A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	76 ns
Continuous Drain Current (ID)	13.8A
Gate to Source Voltage (Vgs)	30V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.28Ohm
Drain to Source Breakdown Voltage	650V
Avalanche Energy Rating (Eas)	290 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead