Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRLW630ATM

IRLW630ATM

IRLW630ATM

ON Semiconductor

Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R

SOT-23

IRLW630ATM Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1999
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.1W Ta 69W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 755pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
In-Stock:3752 items

About IRLW630ATM

The IRLW630ATM from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRLW630ATM, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News