IRLW630ATM

new-10%

Manufacturer part number:IRLW630ATM

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R

Case Package:SOT-23

Datasheet:IRLW630ATM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package	I2PAK (TO-262)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1999
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	3.1W Ta 69W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	400mOhm @ 4.5A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	755pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 5V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V