IPB65R310CFDAATMA1

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Manufacturer part number:IPB65R310CFDAATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH TO263-3

Case Package:SOT-23

Datasheet:IPB65R310CFDAATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	Automotive, AEC-Q101, CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	104.2W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	310m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id	4.5V @ 440μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1110pF @ 100V
Current - Continuous Drain (Id) @ 25°C	11.4A Tc
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Rise Time	7.5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	11.4A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Avalanche Energy Rating (Eas)	290 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead