IPB77N06S3-09

new-10%

Manufacturer part number:IPB77N06S3-09

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 77A D2PAK

Case Package:SOT-23

Datasheet:IPB77N06S3-09 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	77A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	107W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	107W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.8m Ω @ 39A, 10V
Vgs(th) (Max) @ Id	4V @ 55μA
Input Capacitance (Ciss) (Max) @ Vds	5335pF @ 25V
Current - Continuous Drain (Id) @ 25°C	77A Tc
Gate Charge (Qg) (Max) @ Vgs	103nC @ 10V
Rise Time	51ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	51 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	77A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0088Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	308A
Avalanche Energy Rating (Eas)	170 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free